Porous SiC for Semiconductor Power Device

We have developed a SiO2-reduction process, by which Si can be prepared from SiO2 material. By applying this technology to SiO2 material which has a nano-structure, we have successfully prepared SiC which has also a nano structure.

Because the specific surface area of a nano-structure SiC is much higher than a round SiC, its sublimation rate is high, and high production yield of SiC ingot for the use of semiconductor power devices is expected. SiC powder with nano-structure may also show a unique performance in the field of polishing materials and sintered materials.

Microscopic image of Porous SiC

Microscopic image of Porous SiC

 

Microscopic image of Porous SiC

Microscopic image of Porous SiC